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Analysis and Design of MOSFETs

Name: Analysis and Design of MOSFETs
Brand: Chapman and Hall
SKU: 01386058
Price: 154.39 EUR
Availability: InStock
Author: Juin Jei Liou
ISBN: 9780412146015

Modeling, Simulation, and Parameter Extraction

Juin Jei Liou

Adelmo Ortiz-Conde

Francisco Garcia-Sanchez

Jezik

Engleski

Knjiga Tvrdi uvez

Libristo kod: 01386058

Nakladnici Chapman and Hall, rujan 1998

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book dev... Cijeli opis

Libristo kod: 01386058

373 b

154.39 €

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Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.