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Basic of Electronic Device and Circuits
Engleski
95 b
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16.21
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The revised syllabus of Sandip University covers PN Junction Devices, including the characteristics of PN junction diodes, temperature dependence, and capacitance aspects. It delves into Zener and Avalanche Breakdown, as well as Diode Rectifiers such as half-wave, full wave, and bridge rectifiers, with a focus on filter types and ripple factor. The study extends to BJT Biasing and Amplifiers, exploring transistor construction, operations, characteristics, and biasing methods. The analysis of CE, CB, and CC amplifiers is included, covering gain, frequency response, and operational characteristics. The syllabus also addresses voltage regulators and the importance of BJT biasing in transistor circuits.
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Engleski
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