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GaN Transistor Modeling for RF and Power Electronics
Using The ASM-HEMT Model
Engleski
572 b
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The aim of GaN Transistor Modeling for RF and Power Electronics is to cover all aspects of characterization and modelling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects including trapping, self-heating, field plate effects etc to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as Power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology especially for circuit designers, materials science and device engineers as well as academic researchers and students. Provides an overview of the operation and physics of GaN-based transistors Describes indepth all aspects of the ASM-HEMT model for GaN circuits, which is an industry standard model, by the developers of the model Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction
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